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The evolution of ordered steps and facets on III–V semiconductor surfaces is used to directly synthesize quantum wire structures by molecular beam epitaxy (MBE). The existence of macrosteps on (311)A GaAs with a periodicity of 32 Å and a step height of 10 Å during MBE allows us to produce alternating thicker and thinner channels of GaAs in an AlAs matrix. The accumulation of steps by step bunching on (210) GaAs makes feasible the fabrication of mesoscopic step arrays in a GaAs/AlAs multilayer structure having a periodicity which is comparable to the exciton Bohr radius. Finally, a fraction of a strained InAs monolayer on (311)A GaAs is sufficient to change the surface morphology reversibly from corrugated to flat. After evaporation of the InAs the corrugation appears again. This opens a new way to tune and manipulate surface and interface corrugations on high‐index semiconductor surfaces. The existence of the GaAs quantum wire structures and the tunability of their shape is confirmed by reflection high‐energy electron diffraction, atomic force microscopy, high‐resolution electron microscopy, and by the distinct electronic properties.