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Polarization study of the p(1×1)‐ and p(1×2)‐phases of Bi/GaSb(110) using linearly polarized synchrotron radiation

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6 Author(s)
McIlroy, D.N. ; Department of Physics, University of Rhode Island, Kingston, Rhode Island 02881 ; Heskett, D. ; McLean, A.B. ; Ludeke, R.
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The polarization dependence of the surface state bands of the ordered p(1×1)‐ and p(1×2)‐phases of Bi/GaSb(110) at monolayer coverages has been studied with the technique of angle‐resolved ultraviolet photoemission spectroscopy. Four new Bi‐induced surface state bands (S’, S‘, S‴, and SIV) have been observed. The polarization dependence of these states have been probed at the high symmetry points of the surface Brillouin zone and compared with the polarization dependence of corresponding surface state bands of other group‐V semimetals on III–V(110) compound semiconductors. For the (1×1)‐phase, the states S‘, S‴, and SIV all exhibited pz‐like dependence at all of the high symmetry points. The polarization dependence of S’ was observed to evolve from pxy‐like at the X¯’ point of the surface Brillouin zone to pz‐like character at the other high symmetry points. The polarization dependence of S‘, S‴, and SIV were relatively unaffected by the phase transition of the overlayer from the (1×1)‐phase to the (1×2)‐phase.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:11 ,  Issue: 4 )