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Fabrication of deep submicron patterns with high aspect ratio using magnetron reactive ion etching and sidewall process

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2 Author(s)
Shiping, Gao ; Microelectronics R&D Centre, Academia, Sinica, P.O. Box 650, Beijing 100010, People’s Republic of China ; Mengzhen, Chen

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A method for fabrication of fine patterns by conventional technologies is described. Using the sidewall process for fine pattern transfer and magnetron reactive ion etching, deep submicron and nanometer patterns with high aspect ratio have been prepared.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 6 )