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Recent developments in ohmic contacts for III–V compound semiconductors

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3 Author(s)
Shen, T.C. ; University of Illinois, Materials Research Laboratory and Coordinated Science Laboratory, Urbana, Illinois 61801 ; Gao, G.B. ; Morkoc, H.

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Recent advances in the technology and understanding of ohmic contacts for a variety of III–V compound semiconductor material systems are reviewed. Special attention is focused on factors and critical issues involved in making low resistance and reliable ohmic contacts. The solid‐phase regrowth mechanisms of key metallization systems are described. In addition, special techniques to improve the ohmic contacts are discussed. Finally, the reliability issues of ohmic contacts are addressed.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 5 )

Date of Publication:

Sep 1992

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