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Effect of Γ–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures

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2 Author(s)
Ting, D.Z.‐Y. ; Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 ; McGill, T.C.

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The effect of Γ–X mixing on electron tunneling time in GaAs/AlAs symmetric double barrier heterostructures is studied theoretically using an empirical tight‐binding band structure model. It is found that the Γ quasibound state tunneling times can be shortened or lengthened by Γ–X mixing, depending on whether the AlAs barriers consist of an even or odd number of monolayers. This is attributed to the interference between the Γ and X conduction channels in the AlAs barriers.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 4 )

Date of Publication:

Jul 1992

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