By Topic

Analysis of passivating oxide and surface contaminants on GaAs (100) by temperature‐dependent and angle resolved x‐ray photoelectron spectroscopy, and time‐of‐flight secondary ion mass spectrometry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Schroder, F. ; Physikalisches Institut, Universität Münster, Wilhelm‐Klemm‐Str.10, 4400 Münster, Germany ; Storm, W. ; Altebockwinkel, M. ; Wiedmann, L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.585858 

Surface contaminations on GaAs (100) wafers have been analyzed by means of temperature‐dependent and angle resolved x‐ray photoelectron spectroscopy (TOXPS, ARXPS), and time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS). First, the dependence of the composition, chemical state, and diffusion behavior of the passivating thermal oxide on different annealing temperatures was investigated. The phases of this oxide can be described by a multilayer model and are consistent with the Ga–As–O equilibrium phase diagram. Second, the nature and amount of impurities at ambient and elevated temperatures was studied. No metal contaminants were found within the sensitivity of TOF‐SIMS. The residual amount of carbon contamination at the desorption temperature of the oxide depends on the amount of photon irradiation at ambient temperature.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 4 )