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Pulse‐doped pseudomorphic AlGaAs/InGaAs high electron mobility transistors with two InGaAs channels have been grown by molecular‐beam epitaxy. Electrical measurements indicate that the two channels are contributing nearly equally to the conduction. The sheet density is approximately twice that of the single channel structure, and good electron mobilities are obtained. Shubnikov–de Haas measurements confirm the two dimensional transport in the structure. Direct current measurements on device structures exhibit a double peak in the transconductance, low source resistance, and a sharp pinch‐off characteristic.