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Solid‐source molecular‐beam epitaxy has been employed to grow periodic index separate confinement heterostructure InGaAs quantum‐well lasers emitting at 980 nm. The 5 μm×750 μm device fabricated using a self‐aligned process has far‐field angles of 10° by 20°, a threshold current of 45 mA, an external differential quantum efficiency of 1.15 mW/mA (90%), and an output power of 620 mW, all measured at room temperature under cw operation. A record high fiber coupling efficiency of 51% has been achieved.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:10 , Issue: 2 )
Date of Publication: Mar 1992