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Temperature modulation molecular‐beam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantum‐well lasers

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5 Author(s)
Hong, M. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Wu, M.C. ; Chen, Y.K. ; Mannaerts, J.P.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.586109 

Solid‐source molecular‐beam epitaxy has been employed to grow periodic index separate confinement heterostructure InGaAs quantum‐well lasers emitting at 980 nm. The 5 μm×750 μm device fabricated using a self‐aligned process has far‐field angles of 10° by 20°, a threshold current of 45 mA, an external differential quantum efficiency of 1.15 mW/mA (90%), and an output power of 620 mW, all measured at room temperature under cw operation. A record high fiber coupling efficiency of 51% has been achieved.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 2 )

Date of Publication:

Mar 1992

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