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We report the growth and operation of a ZnSe/ZnCdSe quantum well light emitting diode (LED). I–V characteristics confirm the presence of a p–n junction and are similar to those previously reported for homojunction ZnSe LEDs. The room‐temperature electroluminescence spectrum exhibits strong recombination at the quantum well, demonstrating effective confinement and high‐quality materials. The electroluminescence is studied as a function of temperature and operating current of the device.