Cart (Loading....) | Create Account
Close category search window
 

Erbium doping of molecular‐beam epitaxially grown InSb on InP

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Heremans, J. ; General Motors Research Laboratories, Warren, Michigan 48090‐9055 ; Partin, D.L. ; Morelli, D.T. ; Thrush, C.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.586428 

The transport properties of molecular‐beam epitaxially grown InSb films doped with Er (atom densities NEr from 4.3×1016 cm-3 to 3.6×1020 cm-3) are reported at temperatures between 40 and 400 K. Er is a donor in InSb films grown under Sb to In flux ratios smaller than 1.1. At a flux ratio Sb/In=1.06, 25 atoms of Er give one extrinsic electron. The maximum extrinsic electron concentration achievable is ∼1.8×1017 cm-3, obtained for NEr≳4×1018 cm-3. Magnetoresistance measurements at 4.2 K show evidence for spin–disorder scattering of the electrons. The low‐temperature (T≪150 K) electron mobility increases with doping concentration up to rare‐earth densities of 1×1018 cm-3; at higher rare‐earth concentrations, the mobility decreases again. At room temperature, the mobility decreases monotonically with increasing Er concentration. We note the analogy between these results and the observations made on HgSe:Fe, a system in which the carrier mobilities might be enhanced by impurity charge ordering.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 2 )

Date of Publication:

Mar 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.