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The range profile for the combination implantation of 10B and 11B into the three stable isotopes of silicon 28Si, 29Si, and 30Si in the energy range between 1 and 50 keV, has been studied by using the Monte Carlo simulation program trim. It is found that for a given boron isotope, the implantation profile depends strongly on the isotopic state of silicon. The presence of the least abundant isotopes 29Si and 30Si, in silicon of natural abundance, influence considerably the range profile.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:10 , Issue: 2 )
Date of Publication: Mar 1992