Cart (Loading....) | Create Account
Close category search window
 

Simulation of the microstructure of chemical vapor deposited refractory thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Dew, S.K. ; Department of Electrical Engineering, University of Alberta, Edmonton, Alberta T6G 2G7, Canada ; Smy, T. ; Brett, M.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.586422 

A ballistic deposition model (SIMBAD) has been extended to provide qualitative cross‐sectional depictions of the microstructure present in chemical vapor deposited (CVD) films. The model qualitatively depicts the pronounced columnar structure typical of refractory metal, nitride, and silicide films-especially when deposited over integrated circuit topography. The important factors affecting thin film microstructure are seen to be flux shadowing, precursor surface diffusion, and a nonunity sticking coefficient. While the conformal step coverage typical of refractory CVD films is primarily due to a low sticking coefficient, the detailed columnar structure is the result of all three of these mechanisms. The angular distribution of the incident precursor flux is important to the shadowing mechanism, and a sticking coefficient‐dependent angular distribution relevant to CVD is presented. Variations of the model to represent selective deposition (including selectivity loss) are also shown.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 2 )

Date of Publication:

Mar 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.