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Analysis of the mean crystallite size and microstress in titanium silicide thin films

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3 Author(s)
Morimoto, N.I. ; LSI‐EPUSP‐University of São Paulo, Postal Box 8174, 10151, São Paulo, SP, Brasil ; Swart, J.W. ; Gracher Riella, H.

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This paper presents the analysis of the mean crystallite size and microstress in thin titanium silicide films based on the broadening of x‐ray diffraction profiles. The titanium silicide specimens were obtained by rapid thermal annealing of thin titanium films deposited on single‐crystal silicon substrate. The experimental results have shown either the face centered orthorhombic C54 type TiSi2 structure with mean crystallite size of 50 nm or the base centered orthorhombic C49 type TiSi2 structure with 20 nm mean crystallite size, depending on annealing conditions. A decrease in the microstress has been observed with increasing annealing times at 800 °C, without significant variations of the mean crystallite size.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 2 )

Date of Publication:

Mar 1992

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