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A new method based on focused ion beam micromachining of optoelectronic semiconductor microdevices for cross‐sectional transmission electron microscope analyses has been developed. Electron transparent areas in excess of 200 μm2 have been fabricated. These enabled an investigation of the origins of structural defects in a prespecified submicron‐sized region of GaInP/AlGaInP‐based semiconductor laser diodes.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:10 , Issue: 2 )
Date of Publication: Mar 1992