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Secondary ion mass spectrometry depth profiling of nanometer‐scale p+‐n junctions fabricated by Ga+ focused ion beam implantation

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5 Author(s)
Novak, Steven W. ; Evans East, 666 Plainsboro Road, Plainsboro, New Jersey 08536 ; Magee, Charles W. ; Mogul, Homi C. ; Steckl, A.J.
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We have used secondary ion mass spectrometry (SIMS) as an analytical tool to measure the depth distribution of 2–10‐keV focused ion beam Ga implants into crystalline Si. Depth profiling was carried out by SIMS using 2‐keV Cs+ bombardment at 60° with respect to normal and monitoring positive secondary ions. Implant ranges correlate well with those calculated by trim but are shallower by 20–25 Å; in contrast ΔRp values are identical to those calculated by trim. Rapid thermal annealing has been used to electrically activate the Ga and SRP measurements have been used to determine junction depths.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 1 )

Date of Publication:

Jan 1992

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