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Embossed grating lead chalcogenide distributed‐feedback lasers

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2 Author(s)
Schlereth, K.H. ; SEL‐Alcatel, Lorenzstrasse 10, W‐7000 Stuttgart 40, Germany ; Bottner, H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.586309 

The successful preparation of double‐heterostructure (DH) distributed‐feedback (DFB) PbEuSe lasers using an embossing technique for the DFB sub‐micrometer grating is reported here for the first time. The submicrometer grating was performed in (111) oriented silicon wafers by holographic exposure and argon ion milling. Using a hydrostatic press this grating was embossed into a lead chalcogenide wafer, covered by a DH structure grown by molecular beam epitaxy. Lasers made from wafers with grating periodicities of 0.678 and 0.755 μm show DFB characteristics at the corresponding emission wavenumbers around 1420 and 1590 cm-1.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:10 ,  Issue: 1 )

Date of Publication:

Jan 1992

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