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On the possibility of MBE growth interface modification by hydrogen

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2 Author(s)
Bachrach, R.Z. ; Xerox Palo Alto Research Center, Palo Alto, California 94304 ; Bringans, R.D.

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The study of the clean surface reconstructions of GaAs(100) and (1¯1¯1¯) has been extended with an investigation of their interaction with atomic and molecular hydrogen. This is of interest both because hydrogen is a common growth ambient and because there is some indication that growing in the presence of hydrogen improves crystal electrical quality. The core level photoemission spectroscopy results show that at a saturation hydrogen coverage, the atomic hydrogen converts the clean surface reconstructions to a distinct semiconducting reconstruction with a specific composition independent of the starting surface reconstruction. A mechanism is deduced whereby the hydrogen forms surface arsenic and gallium hydrides which sublime. These results indicate that hydrogen could modify the MBE growth interface by regulating the surface gallium to arsenic ratio.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:1 ,  Issue: 2 )