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A broadband stacked power amplifier using 2-mum GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dual-stacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42%.