By Topic

A broadband stacked power amplifier using 2-µm GaAs HBT process for C-band applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Chih-Chun Shen ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli ; Fan-Hsiu Huang ; Cheng-Kuo Lin ; Hong-Yeh Chang
more authors

A broadband stacked power amplifier using 2-mum GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dual-stacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42%.

Published in:

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Date of Conference:

16-20 Dec. 2008