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High performance integrated passive technology by SI-GaAs-based fabrication for RF and microwave applications

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5 Author(s)
Cong Wang ; RFIC Center, Kwangwoon Univ., Seoul ; Cheng Qian ; Kyung, G.I. ; Shrestha, B.
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Conclusions IPD technology is paramount in furthering the performance and integration of functionality as well as shrinking in size in RF front-end systems. The proposed fabrication process enables a high performance integration of passive technology; the reliable NiCr TFR, spiral inductor with high Q factor, and MIM capacitor of compact size with high yield are realized by the IPD technology, and Wilkinson power divider is fabricated with excellent RF performances.

Published in:
Microwave Conference, 2008. APMC 2008. Asia-Pacific

Date of Conference: 16-20 Dec. 2008

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