Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Substrate Biasing Effect during MgO Deposition in CoFeB/MgO/CoFeB MTJs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Choi, G.M. ; Center for Spintronics Res., KIST, Seoul ; Shin, K.H. ; Seo, S.A. ; Kim, S.O.
more authors

High tunneling magnetoresistance (TMR) ratio and low RA in magnetic tunnel junctions are necessary condition for application in magnetic random access memory. To get high TMR ratio and low RA, good quality of MgO (002) insulating layer is important. To increase crystalline quality of MgO (002) layer, we applied negative bias on the substrate during MgO deposition. We report the results of the tunneling magnetoresistance (TMR) ratio and the resistance-area product (RA) for CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with substrate bias voltage, and showed TMR increase and RA decrease with substrate bias. The effects of substrate bias voltage on the TMR ratio, RA and MgO (002) peak intensity are discussed.

Published in:

Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 6 )