By Topic

Ferromagnetic Phase in Bulk (Cd, Cr)Te Dilute Magnetic Semiconductor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kowan-Young Ko ; Sch. of Mech. Eng., Ulsan Coll. Univ., Ulsan

Metallurgical, magnetic and electrical properties of bulk Cr-doped CdTe crystal grown by vertical solidification method are reported. Structural and metallographic investigation showed homogeneous zinc-blende structure with a lattice parameter of about 6.481 Aring. Magnetic measurement showed temperature-induced magnetic phase transition with a Curie temperature ~ 362 K. Resistance with 4 probe method showed highly insulating > 108Omega at room temperature. Composition analysis using field emission transmission electron microscopy revealed that it could be composed of locally different Cr-substituted CdTe region depending on Cr content.

Published in:

Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 6 )