By Topic

Sensitivity Dependence of the Planar Hall Effect Sensor on the Free Layer of the Spin-Valve Structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Hung, T.Q. ; Dept. of Mater. Sci. & Eng., Chungnam Nat. Univ., Daejeon ; Oh, S.J. ; Tu, B.D. ; Duc, N.H.
more authors

Planar Hall effect (PHE) sensors with the junction size of 50 mum times 50 mum were fabricated successfully by using spin-valve thin films Ta(5)/NiFe(x) /Cu(1.2)/NiFe(2)/IrMn(15)/Ta(5) (nm) with x = 4, 8, 10, 12, 16. The magnetic field sensitivity of the PHE sensors increases with increasing thickness of ferromagnetic (FM) free layer. The sensitivity of about 95.5 m Omega/(kA/m) can be obtained when the thickness of the FM-free layer increases up to 16 nm. The enhancement of sensitivity is explained by the shunt current from other layers. The PHE profiles are well described in terms of the Stoner-Wohlfarth energy model. The detection of magnetic micro-beads label Dynabeadsreg M-280 is demonstrated and the results revealed that the sensor is feasible for high-resolution biosensor applications.

Published in:

Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 6 )