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The surface acoustic wave propagation characteristics of 64° Y-X LiNbO3 and 36° Y-X LiTaO3 substrates with thin-film SiO2

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4 Author(s)
Hickemell, F.S. ; Gov. & Space Technol. Group, Motorola Inc., Scottsdale, AZ, USA ; Knuth, H.D. ; Dablemont, R.C. ; Hickernell, F.S.

The SAW characteristics of thin-film sputtered silicon dioxide (SiO2) on substrates of 64° Y-X lithium niobate (LiNbO 3) and 36° Y-X lithium tantalate (LiTaO3) have been measured in the frequency range from 30 MHz to above 1.0 GHz. Silicon dioxide films in the 500 nm to 2000 nm thickness range were deposited by RF diode sputtering. The SAW velocity, propagation loss, capacitance ratio (Cm/C0), and temperature coefficient of frequency (TCF), were measured using thin-film aluminum interdigital electrodes patterned on the upper film surface. The presence of the SiO2 initially stiffened the substrate surfaces before softening the surface with increasing thickness. The SAW propagation loss values showed a minimum at film-thickness to acoustic-wavelength ratios (t/λ) in the 0.02 to 0.08 region. The TCF improved but Cm/C0 decreased with increasing t/λ ratio

Published in:

Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE  (Volume:1 )

Date of Conference:

7-10 Nov 1995