Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.571679
Electron‐beam pulses applied to various regions of an operating GaAs field‐effect transistor (FET) produce both fast and slow changes in gate and drain currents. These effects provide information regarding transient phenomena occurring at the top and bottom interfaces which define the FET channel. In particular, large changes observed in the drain current reflect the kinetics of charge carrier trapping and recombination at the interfaces. Additional information is obtained from changes which result when the gate and drain bias are varied, and from comparison of different device structures, for example, devices with and without gates. Data are presented for a junction FET (JFET) and an analogous device without a gate. The gate bias dependence observed suggests that the trapping phenomena are occurring below the FET channel. A rapid transient response which is observed in the JFET that is absent in devices without a gate indicates enhanced recombination due to the p‐n junction.