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Influence of the surface on photoluminescence from indium phosphide crystals

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3 Author(s)
Street, R.A. ; Xerox Palo Alto Research Center, Palo Alto, California 94304 ; Williams, R.H. ; Bauer, R.S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.570580 

The photoluminescence of indium phosphide has been measured on crystals in ultrahigh vacuum and subsequently oxidized in a controlled manner. The luminescence intensity can vary by more than an order of magnitude and shows a close correspondence to the known shift of the Fermi level at the surface under oxidation. We conclude that the oxidation‐induced surface space charge layer is nonradiative due to the presence of the electric field. The band bending and surface charge variation can be estimated quantitatively from the data. The influence of surface contamination on Schottky barrier formation is also reported.

Published in:

Journal of Vacuum Science and Technology  (Volume:17 ,  Issue: 5 )

Date of Publication:

Sep 1980

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