Cart (Loading....) | Create Account
Close category search window

Metal contacts to clean and oxidized cadmium telluride and indium phosphide surfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Humphreys, T.P. ; School of Physical Sciences, The New University of Ulster, Coleraine, Northern Ireland ; Patterson, M.H. ; Williams, R.H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Examination of the scientific literature reveals a large variation in the Schottky barrier heights measured for metals such as silver deposited on atomically clean cadmium telluride surfaces. In the present studies we have probed the growth of gold, silver, and aluminium films on clean cleaved cadmium telluride by LEED, angle resolved UPS, by AES and by XPS. We have also probed the early formation of the Schottky barriers and established the thick film values for metals on clean and oxidised surfaces by C–V and I–V methods. The experiments indicate that in many cases the interfaces formed are not atomically abrupt and there is considerable intermixing between the metal and the CdTe. Low energy electron beams have dramatic effects on the CdTe (disordering it without altering its chemical composition), and on the interfaces formed with metals. The interfacial oxide layer, produced by cleaving in air, has a significant influence on the interfacial properties. The results of the experiments are compared to similar experiments for metal contacts to indium phosphide. The observations are discussed in terms of various theories of Schottky barrier formation and in particular we consider the defect model and its applicability to CdTe and InP.

Published in:

Journal of Vacuum Science and Technology  (Volume:17 ,  Issue: 5 )

Date of Publication:

Sep 1980

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.