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Nondestructive characterization of interface layers between Si or GaAs and their oxides by spectroscopic ellipsometry

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3 Author(s)
Aspnes, D.E. ; Bell Laboratories, Murray Hill, New Jersey 07974 ; Theeten, J.B. ; Chang, R.P.H.

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The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor–dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is described. Application to the Si/thermally grown SiO2 interface shows 7.7±2.0 Å of chemically mixed a‐Si and SiO2 of approximate stoichiometry SiO to be present. The amount of a‐As present at GaAs/plasma‐grown‐oxide interface is dependent upon growth rate. Plasma oxides are found to contain about 2% unoxidized a‐As.

Published in:

Journal of Vacuum Science and Technology  (Volume:16 ,  Issue: 5 )