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The technique of electron impact emission spectroscopy (EIES) has been used to control the rate of silicon evaporation in both sequential and codeposition processes with aluminum. The evaporant flux is allowed to pass through a sensor where it is excited by electron bombardment. The specific emission line for each component is selected either with a narrow band optical filter, or a monochromator. Experimental results on these systems show the technique to have sufficient sensitivity and selectivity to control Si and low percentage Si alloys.