By Topic

Modeling of InGaAs MSM photodetector for circuit-level simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Xiang, A. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Wohlmuth, Walter ; Fay, P. ; Sung-Mo Kang
more authors

An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes

Published in:

Lightwave Technology, Journal of  (Volume:14 ,  Issue: 5 )