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Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction

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6 Author(s)
Brown, April S. ; Department of Electronic and Computer Engineering, Duke University, Durham, North Carolina 27708 ; Losurdo, Maria ; Capezzuto, Pio ; Bruno, Giovanni
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The fundamental chemical and kinetic surface processes governing the P-for-As exchange reaction during epitaxial layer synthesis are investigated. Exposure of a GaAs surface to phosphorus molecular beams (P2) is carried out to create superlattice structures realized by surface reactions. The impact of the GaAs surface reconstruction, the P-soak time, and the surface temperature on the extent of intermixing and on the mechanism governing the anion exchange has been studied using x-ray diffraction, spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and atomic force microscopy. It is found that As-rich GaAs surface reconstructions inhibit P-for-As exchange. The extent of the anion exchange increases with temperature. Furthermore, the P-for-As exchange is not controlled by P diffusion into the GaAs. We propose a chemical model that includes P chemisorption and indiffusion, and the competition between P-for-As anion exchange and the formation of AsP isoelectronic compounds.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 9 )

Date of Publication:

May 2006

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