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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

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17 Author(s)
Kamiyama, S. ; Faculty of Science and Technology and Nano Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan ; Maeda, T. ; Nakamura, Y. ; Iwaya, M.
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High-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a full width at half maximum of 110 nm at 250 K. The high B concentration of more than 1018 cm-3 improves the emission efficiency of the DAP recombination at a high temperature. Compared with the photoluminescence spectrum of GaN at 10 K, a high quantum efficiency of 95% was estimated for the highly B-doped sample. From time-resolved photoluminescence measurements, a DAP recombination time of 5.0 ms was obtained, which is in good agreement with the calculated value by the rate equation with the assumption of a 95% internal quantum efficiency. This is quite promising as a light-emitting medium by optical pumping, as well as monolithic light sources combined with nitride-based light-emitting diodes grown on the DA-doped SiC epilayer.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 9 )

Date of Publication:

May 2006

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