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Terahertz amplification in delta-doped germanium films with in-plane transport

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3 Author(s)
Dolguikh, M.V. ; Department of Physics, University of Central Florida, Orlando, Florida 32816 and College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 ; Muravjov, A.V. ; Peale, R.E.

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Amplification of terahertz radiation on intersubband transitions has been analyzed by numerical Monte Carlo simulation for p-type delta-doped Ge films with in-plane transport configuration of applied electric and magnetic fields. A significant increase of the gain is found, compared to existing bulk p-Ge lasers, due to spatial separation of light and heavy hole streams, which reduces scattering of light holes on ionized impurities and heavy holes. The considered device has potential as a widely tunable (2–4 THz) laser with high duty cycle and operating temperatures up to 50 K.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 9 )

Date of Publication:

May 2006

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