IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Journal of Applied Physics ...> Volume:99 Issue:8 Help

Magnetoresistance and performance of amorphous-CoNbZr/Co/Cu/Co magnetic multilayers

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wen, Qi-Ye ; School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu 610054, China ; Zhang, Huai-Wu ; Jiang, Xiang-Dong ; Zhang, Wan-Li
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2171019 

A pseudo spin-valve (PSV) using amorphous CoNbZr alloy as a soft magnetic layer and buffer layer was proposed. The giant magnetoresistance (GMR), thermal annealing effect, and the performance were investigated. Antiparallel magnetization alignments were observed in the samples with 2–4 nm CoNbZr layer and a maximum GMR of 6.5% was obtained. Furthermore, sandwich with relatively thick CoNbZr layer has a superior thermal stability to 400 °C and a GMR enhancement to about 9%. After patterning to 6 μm×1 μm elliptic stripe, a single domain forms and the dynamic MR behavior indicates the stripe has a linear and stable GMR response. Therefore, it is believed that the PSVs with amorphous CoNbZr layers have good potentials for spin-electronic devices.

Published in:
Journal of Applied Physics  (Volume:99 ,  Issue: 8 )

Date of Publication: Apr 2006

Page(s):
08T105 - 08T105-3
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2171019
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2006

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.