By Topic

Fabrication of ultrathin Ni–Zn ferrite films using electron cyclotron resonance sputtering method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Tanaka, Terumitsu ; Faculty of Engineering, Yamaguchi University, Ube 755-8611, Japan ; Kurisu, Hiroki ; Matsuura, Mitsuru ; Shimosato, Yoshihiro
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2169538 

Well-crystallized Ni–Zn ferrite (Ni0.4Zn0.6Fe2O4) highly oriented ultrathin films were obtained at a substrate temperature of 200 °C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni–Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni–Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni–Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni–Zn ferrite, crystallized on a MgO (100) underlayer.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 8 )