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Tuning of MgO barrier magnetic tunnel junction bias current for picotesla magnetic field detection

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6 Author(s)
Ferreira, R. ; Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias (INESC-MN), Rua Alves Redol, 9-1 1000-029 Lisboa Portugal and Instituto Superior Técnico (IST), 1000-029 Lisboa, Portugal ; Wisniowski, P. ; Freitas, P.P. ; Langer, J.
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Two sets of low resistance MgO junctions were patterned into junctions with areas from 1 to 24 μm2. By properly choosing the operating conditions the background noise can be placed at the level of equivalent fields of ∼10-11 and ∼10-12 T/Hz0.5 calculated for 30 Oe linear range junctions of types 1 (150 Ω μm2, tunnel magnetoresistance (TMR)=150%) and 2 (30 Ω μm2, TMR=100%), respectively. Such room temperature sensitivities can only be achieved at frequencies where the 1/f noise contribution is negligible. From the 1/f noise Hooge constant (αH=2.66×10-9 μm2 at R×A∼150 Ω μm2 and αH=1.24×10-9 μm2 at R×A∼30 Ω μm2) the 1/f noise corner in the optimum biasing conditions is predicted to be located between 10 and 70 MHz, depending on junction area and resistance.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 8 )