By Topic

Tuning of MgO barrier magnetic tunnel junction bias current for picotesla magnetic field detection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ferreira, R. ; Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias (INESC-MN), Rua Alves Redol, 9-1 1000-029 Lisboa Portugal and Instituto Superior Técnico (IST), 1000-029 Lisboa, Portugal ; Wisniowski, P. ; Freitas, P.P. ; Langer, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Two sets of low resistance MgO junctions were patterned into junctions with areas from 1 to 24 μm2. By properly choosing the operating conditions the background noise can be placed at the level of equivalent fields of ∼10-11 and ∼10-12 T/Hz0.5 calculated for 30 Oe linear range junctions of types 1 (150 Ω μm2, tunnel magnetoresistance (TMR)=150%) and 2 (30 Ω μm2, TMR=100%), respectively. Such room temperature sensitivities can only be achieved at frequencies where the 1/f noise contribution is negligible. From the 1/f noise Hooge constant (αH=2.66×10-9 μm2 at R×A∼150 Ω μm2 and αH=1.24×10-9 μm2 at R×A∼30 Ω μm2) the 1/f noise corner in the optimum biasing conditions is predicted to be located between 10 and 70 MHz, depending on junction area and resistance.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 8 )