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Field assisted spin switching in magnetic random access memory

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7 Author(s)
Jeong, W.C. ; Technology Development Team 2, Semiconductor R&D Division, Samsung Electronics Co., Ltd., San-24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea ; Park, J.H. ; Oh, J.H. ; Koh, G.H.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2172578 

A switching method called by field assisted spin switching has been investigated. A field assisted spin switching consists of a metal line induced magnetic field and a spin switching through a magnetic tunnel junction. It is a variation of a current induced switching and assisted by the magnetic field induced by the current-carrying metal line. Various current paths have been tested to investigate how and how much the spin switching contributes to the overall switching and the results will be explained. A computer simulation has been complemented to measure the degree of the thermal effect in the switching.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 8 )

Date of Publication:

Apr 2006

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