CoCrPt and CoCrPt-SiO2 magnetic layers were investigated as a function of substrate bias. It was found that the use of substrate bias greatly modified the CoCrPt-SiO2 film microstructure. This was due to a large change in the SiO2 content during bias sputtering. Biasing had an effect of reducing the amount of oxide in the growing films and promoting the growth of larger grains, but it was also found to be very effective in decoupling the grains as determined by ΔM curves. In addition, in the biased films, a large dependence of the coercivity on film thickness was observed. The in-plane coercivity nearly doubled its value from 2400 to 4300 Oe as the thickness increased from 5 to 15 nm.
Published in:
Journal of Applied Physics
(Volume:99
,
Issue:
8
)
Date of Publication:
Apr 2006
- Page(s):
-
08G910
-
08G910-3
- ISSN :
-
0021-8979
- Digital Object Identifier :
-
10.1063/1.2169536
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
Apr 2006