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How to avoid TRAPATT oscillations at the reverse-recovery of power diodes

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2 Author(s)
Kaschani, K.T. ; Inst. fur Elektrophys., Tech. Univ. Braunschweig, Germany ; Sittig, R.

For optimization of p-i-n type power diodes a minimization of base width is proposed. It is found, however, that the reverse-recovery characteristic of such devices is extremely prone to undesirable TRAPATT oscillations. Therefore a detailed analysis of the fundamental effects leading to these oscillations is carried out, in order to take appropriate measures for avoidance. As a result a design of p-i-n type power diodes is developed, which shows excellent features for overvoltage limitation

Published in:

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Date of Conference:

11-14 Oct 1995