How to avoid TRAPATT oscillations at the reverse-recovery of power diodes

For optimization of p-i-n type power diodes a minimization of base width is proposed. It is found, however, that the reverse-recovery characteristic of such devices is extremely prone to undesirable TRAPATT oscillations. Therefore a detailed analysis of the fundamental effects leading to these oscillations is carried out, in order to take appropriate measures for avoidance. As a result a design of p-i-n type power diodes is developed, which shows excellent features for overvoltage limitation.