Cart (Loading....) | Create Account
Close category search window
 

Dielectric and tunable properties of K-doped Ba0.6Sr0.4TiO3 thin films fabricated by sol-gel method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Sun, Xiaohua ; Department of Physics, Center of Nanoscience and Nanotechnology, Wuhan University, Wuhan 430072, China ; Zhu, Bailin ; Liu, Tao ; Li, Meiya
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2189976 

Ba0.6Sr0.4TiO3 (BST) thin films doped by K (BSTK) from 1 to 20 mol % were fabricated by sol-gel method on a Pt/TiO2/SiO2/Si substrate. Thermal evolutionary process of the Ba0.6Sr0.4TiO3 and (Ba0.6Sr0.4)0.95K0.05TiO3 dry gel was carried out by thermogravimetry and differential thermal analysis system. The structure and surface morphology of BST thin films were investigated as functions of K concentration by x-ray diffraction and atomic force microscopy. The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1 MHz. The K concentration in BST thin films has a strong influence on the material properties including surface morphology and dielectric and tunable properties. The grain size, surface root-mean-square roughness, dielectric constant, dissipation factor, and tunability all increased with increasing K content up to 7.5 mol % and then decreased with increasing K content from 7.5 to 20 mol % in the BSTK thin films at 1 MHz. The effects of K doping on the microstructure and dielectric and tunable properties of Ba0.6Sr0.4- TiO3 thin films were analyzed. The (Ba0.6Sr0.4)92.5%K7.5%TiO3 thin film exhibited the highest dielectric constant of 1040 and the largest tunability of 73.6%. The dielectric constant, dielectric loss, and tunability of K-doped BST thin films with the optimal K content of 5 mol % were about 971, 0.023, and 69.96%, respectively. In addition, its figure of merit showed a maximum value of approximately 28.52.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 8 )

Date of Publication:

Apr 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.