By Topic

Thickness dependences of ferroelectric and dielectric properties in (Bi3.15Nd0.85)Ti3O12 thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Gao, X.S. ; Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117576, Singapore ; Wang, J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

(Bi3.15Nd0.85)Ti3O12 (BNdT) thin films deposited by rf sputtering on Pt/TiO2/Si substrates demonstrate thickness dependences of electrical properties. The films exhibit well-established ferroelectric hysteresis loops with an almost thickness independent 2Pr of ∼23 μC/cm2 at 500 kV/cm. However, their nonvolatile polarization shows a monotonous decrease with increasing thickness at low operation voltages. Their coercive voltages exhibit an increase with increasing film thickness, which is accounted for by the existence of an interfacial nonferroelectric dead layer. Their dielectric permittivity demonstrates frequency and thickness dependent behavior, supporting the existence of the interfacial dead layer. The film thickness also affects both the reversible and irreversible components in the ac field dependence of relative permittivity.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 7 )