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Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers

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5 Author(s)
Shiojiri, M. ; Kyoto Institute of Technology, Kyoto 606-8585, Japan and Department of Anatomy, Kanazawa Medical University, Ishikawa 920-0293, Japan ; Chuo, C.C. ; Hsu, J.T. ; Yang, J.R.
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A variety of different transmission electron microscopy techniques, and particularly high-angle annular dark-field scanning transmission electron microscopy, has been used to reveal that V defects or inverted hexagonal pyramid defects in multiple InGaN/GaN quantum well (QW) layers nucleate on threading dislocations that cross the InGaN QW. The defects have thin walls lying parallel to {1011} with the InGaN/GaN QW structure. A formation mechanism for the V defects is proposed taking into account the growth kinetics of GaN and the segregation of In atoms in the strain field around the cores of the threading dislocations.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 7 )

Date of Publication:

Apr 2006

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