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Erratum: “Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy” [J. Appl. Phys. 98, 123502 (2005)]

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10 Author(s)
Yun, F. ; Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 ; Moon, Y.T. ; Fu, Y. ; Zhu, K.
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Journal of Applied Physics  (Volume:99 ,  Issue: 6 )