IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Journal of Applied Physics ...> Volume:99 Issue:6 Help

Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Goldenblum, A. ; National Institute of Materials Physics, Atomistilor Street 105 bis, P.O. Box MG7, Magurele-Bucuresti 77125, Romania ; Pintilie, I. ; Buda, M. ; Popa, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2180428 

The carrier transport mechanisms in as-grown LaAlO3 and La2Hf2O7 high-k insulator layers deposited on n- and p-Si were deduced from temperature dependent C-V and I-V characteristics correlated with photoelectric measurements. Large, parallel shifts in the high frequency C-V curves are explained by the presence of a large density of interface states and an approximate analytical formula relating the density of states to the C-V shift is deduced. The space charge limited current is explained by the existence of impurity channels situated energetically near the conduction or valence band of silicon.

Published in:
Journal of Applied Physics  (Volume:99 ,  Issue: 6 )

Date of Publication: Mar 2006

Page(s):
064105 - 064105-9
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2180428
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Mar 2006

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.