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Temperature dependent refractive index of amorphous silicon determined by time-resolved reflectivity during low fluence excimer laser heating

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2 Author(s)
Hoyland, J.D. ; Physics Department, Acadia University, Wolfville, Nova Scotia BP4 2R6, Canada ; Sands, D.

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The temperature dependent refractive index of amorphous silicon has been measured at a wavelength of 820 nm from room temperature up to nearly the melting point close to 1200 °C. The method employed is to use a single pulse from a XeCl excimer laser to heat the silicon without crystallizing it and to measure the transient reflectivity. This is then modeled by converting a calculated temperature profile into an effective multilayer structure and calculating the reflectivity using a transfer matrix formulation. The refractive index is optimized using simulated annealing. The real part of the refractive index is found to vary linearly with a temperature coefficient of 3.85×10-4 while the extinction coefficient is found to vary as exp(3.82×10-3T), with T=0 at room temperature.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 6 )