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Probing residual strain in InGaAs/GaAs micro-origami tubes by micro-Raman spectroscopy

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7 Author(s)
Bernardi, A. ; Institut de Ciència de Materials de Barcelona, CSIC, Esfera UAB, 08193 Bellaterra, Spain ; Goni, A.R. ; Alonso, M.I. ; Alsina, F.
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We have experimentally investigated nanostructures consisting of free-standing microtubes with diameters in the micrometer range fabricated by rolling-up InGaAs/GaAs bilayers grown by molecular-beam epitaxy on a GaAs substrate. The formation of the microtubes is powered by the built-in strain in the InGaAs layer and they develop after releasing the bilayer structure from the substrate by selective etching. Through micro-Raman spectroscopy we were able to detect the residual strain of the microtube, which results in a frequency shift of phonon modes measured on the tube as compared with reference unstrained material. We developed a simple elastic model to describe the measured phonon frequency shifts, from which we estimate the strain status of the microtube. Results demonstrate the power of Raman spectroscopy as a diagnostic tool for engineering of strain-driven self-positioning microelectromechanical systems.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 6 )

Date of Publication:

Mar 2006

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