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Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf/Al compositional ratio

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11 Author(s)
Kadoshima, M. ; MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan ; Ogawa, A. ; Ota, H. ; Iwamoto, Kunihiko
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We propose a method for restoring the symmetry in the threshold voltage (Vth) in complementary metal-oxide-semiconductor field-effect transistors (FETs) with a Hf-based high-k dielectric. This technique is based on the Al composition adjustment in the HfAlOx(N) dielectric film to achieve the symmetric Vth. The asymmetry of |Vth| in n and p metal-oxide-semiconductor FET (MOSFETs) due to the Fermi-level pinning at the interface between the poly-Si gate electrode and Hf-based high-k dielectric is considered to be induced independently by two kinds of interfacial dipoles. The adjustment of the Al content in HfAlOx(N) enables us to balance these dipoles. Vth values of n- and p-MOSFETs are shifted in the positive direction as the Al content in HfAlOx(N) increases. Symmetrical Vth values can be obtained for poly-Si and single fully silicided nickel gate electrodes when the Al contents are about 25 and 7 at. % in HfAlOx(N), respectively.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 5 )