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Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect

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7 Author(s)
Wang, Can ; National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Takahashi, Mitsue ; Fujino, Hidetoshi ; Zhao, Xia
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Thin films of multiferroic (Bi0.6Tb0.3La0.1)FeO3 were grown on Pt/Ti/SiO2/Si substrate under various oxygen pressures by pulsed laser deposition technique. X-ray diffraction patterns show that the crystallinity of the thin film is improved with decreasing depositing oxygen pressure and the thin film grown at a lower oxygen pressure of 0.01 torr exhibits a single perovskite phase with preferred (001) orientation. Leakage current of the as-deposited thin films decreases with decreasing grown oxygen pressure. Significantly, the leakage current of the thin films can be reduced largely by an annealing process at 800 °C with flowing oxygen. The annealed thin films show a relatively high resistivity and stable polarization loops with double remnant polarization of about 3 μC/cm2. The conduction properties of the thin films have been well analyzed, and it is indicated that the dominant conduction mechanism is the space-charge-limited conduction for the thin film grown at higher oxygen pressure and the Poole-Frenkel conduction for the thin films grown at lower oxygen pressure.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 5 )

Date of Publication:

Mar 2006

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