Cart (Loading....) | Create Account
Close category search window

Environmental stability and cryogenic thermal cycling of low-temperature plasma-deposited silicon nitride thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Martyniuk, M. ; School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Western Australia 6009, Australia ; Antoszewski, J. ; Musca, C.A. ; Dell, J.M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Stress in low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNx) thin films subject to cryogenic thermal cycling (100–323 K) has been measured. It is observed that the SiNx deposition temperature strongly influences the thin film characteristics. For films deposited between 200 and 300 °C, the thermal expansion coefficient is similar to that of silicon over the 180–323 K temperature range. The room temperature thermal expansion coefficient of SiNx films is found to decrease sublinearly from 5.2×10-6 to 2.6×10-6 K-1 as the temperature of the deposition process is increased from 50 to 300 °C. The negative correlation between deposition temperature and thin film thermal expansion coefficient, and the positive correlation between deposition temperature and the thin film Young’s modulus inferred from nanoindentation are postulated to be associated with the local bonding environment within the thin film. The stress state of SiNx films deposited above 150 °C is stable under atmospheric conditions, in contrast to SiNx films deposited below 100 °C, which under atmospheric storage conditions become more tensile with time due to oxidation. In addition, SiNx t- hin films deposited below 100 °C exhibit higher tensile stress values in vacuum than at atmospheric pressure, and vacuum annealing at 50 °C of films deposited below 100 °C introduces further tensile stress changes. These stress changes have been shown to be fully reversible upon reexposure to high purity nitrogen, helium, argon, oxygen, or laboratory atmosphere, and are likely to be associated with thin film porosity.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 5 )

Date of Publication:

Mar 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.