By Topic

High-peak-power pulsed operation of 2.0 μm (AlGaIn)(AsSb) quantum-well ridge waveguide diode lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Eichhorn, M. ; German-French Research Institute of Saint-Louis ISL, 5 rue du Général Cassagnou, BP 70034, F-68301 Saint-Louis, France ; Rattunde, M. ; Schmitz, J. ; Kaufel, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2179121 

We have characterized 2.0 μm (aluminium-gallium-indium)(arsenide-antimonide) quantum-well diode lasers in pulsed operation (20–60 ns). A peak power of 1.25 W could be achieved. The near-field distribution on the output facet and the spectral output have been analyzed. Single transverse mode operation can only be maintained at low pulse currents. Above a certain current limit higher order modes occur and fluctuations between these modes have been resolved on a 10 ns time scale. The threshold for thermal and optical damage was investigated for ridge waveguide widths of 6, 8, and 16 μm. No systematic damage threshold could be determined up to current densities as high as 200 kA/cm2.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 5 )