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Raman scattering from epitaxial HfN layers grown on MgO(001)

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4 Author(s)
Stoehr, M. ; Department of Materials Science and the Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801 and Institut Universitaire de Technologie, Université de Haute Alsace, 68093 Mulhouse Cedex, France ; Seo, H.-S. ; Petrov, I. ; Greene, J.E.

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Stoichiometric single-crystal HfN layers grown on MgO(001) are analyzed by Raman spectroscopy. Second-order Raman scattering predominates, but first-order modes in the acoustic and optical ranges are also visible. The latter indicates that the Oh symmetry of NaCl-structure HfN is broken. The large mass difference between Hf and N leads to a correspondingly large separation, 250 cm-1, between the first-order acoustic and optical bands. Within this gap, four Raman lines are clearly observed. The first three are the second-order transverse acoustic mode (240 cm-1), the sum of the first-order transverse and longitudinal acoustic modes (280 cm-1), and the second-order longitudinal acoustic mode (325 cm-1). The fourth line at 380 cm-1 is identified as the difference between the first-order optical and acoustic modes. The observed first-order Raman scattering, as well as the width of the gap between the first-order acoustic and optical modes, is in good agreement with previously calculated HfN phonon density of states.

Published in:

Journal of Applied Physics  (Volume:99 ,  Issue: 4 )